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Emission Microscope Product List

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[EMS] Emission Microscopy Method

[EMS] Emission Microscopy Method

Rapid identification of the malfunctioning area.

EMS is a method that quickly identifies the location of faults by detecting weak light emissions caused by abnormal operation of semiconductor devices. It is also referred to as EMMS, PEM, or EMI. - Only transparent materials can be evaluated in the measurement wavelength range (from the visible to near-infrared region). - It is possible to capture internal defects such as cracks, crystal defects, oxide film breakdown due to ESD, and shorts caused by Al spikes with low damage.

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  • Contract Analysis
  • Contract measurement
  • Contract Inspection

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Hamamatsu Photonics PHEMOS-X

Hamamatsu Photonics PHEMOS-X

Equipped with a multi-wavelength laser, it can handle everything from visible light to near-infrared light with a single device.

PHEMOS-X is a high-resolution emission microscope that captures light emission and heat generation caused by semiconductor device failures to identify the failure location. 1. Capable of mounting up to two ultra-high sensitivity cameras. 2. Can accommodate up to seven light sources for OBIRCH, DALS, EOP, and laser markers. 3. Equipped with an optical stage compatible with various samples.

  • Optical microscope

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PHEMOS-X Emission Microscope

PHEMOS-X Emission Microscope

Equipped with a multi-wavelength laser, it can handle everything from visible light to near-infrared light with a single device.

PHEMOS-X is a high-resolution emission microscope that captures phenomena such as light emission and heat generation caused by semiconductor device failures, allowing for the identification of the failure location.

  • Optical microscope
  • Other microscopes and optical inspection equipment
  • Analysis Equipment

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[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

Identification of failure locations using an emission microscope with a high voltage power supply.

By overlaying the luminescent image and the IR image, it is possible to identify leak locations under microscopic observation. If there are large-scale appearance anomalies such as cracks or electrostatic breakdown, abnormalities can also be confirmed with an IR microscope. Additionally, if luminescence cannot be detected due to light shielding of the emitter electrode, the collector electrode is removed, and near-infrared light is detected from the collector side. An example is presented where a high-voltage power supply capable of applying up to 2000V is used to operate a power device with high voltage resistance and low leakage current, and the failure location is identified using an emission microscope.

  • Contract Analysis

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Dual PHEMOS-X Emission Microscope

Dual PHEMOS-X Emission Microscope

High-resolution emission microscope

The Dual PHEMOS-X is a high-resolution emission microscope capable of various analyses for advanced 3D devices that require failure analysis from both sides (front and back) in the state of semiconductor wafers and dies.

  • Optical microscope
  • Other microscopes and optical inspection equipment
  • Analysis Equipment

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